A Novel Propagation Model for Heavy-Ions Induced Single Event Transients on 65nm Flash-based FPGAs

被引：0

作者：

Du, B. ^{[1
]}

Colucci, M. ^{[3
]}

Francola, S. ^{[2
]}

Aranci, L. ^{[3
]}

Artina, E. ^{[3
]}

Ratti, N. ^{[3
]}

Picardi, E. ^{[3
]}

Mancini, R. ^{[2
]}

Piloni, V. ^{[2
]}

Azimi, S. ^{[1
]}

Sterpone, L. ^{[1
]}

机构：

[1] Politecnico Torino Torino, IDAUIN, Turin, Italy

[2] Thales Alenia Space, Rome, Italy

[3] Thales Alenia Space, Milan, Italy

来源：

2020 20TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS 2020) | 2022年

关键词：

Heavy Ions; Single Event Transients; Propagation Induced Pulse Broadening;

D O I：

10.1109/RADECS50773.2020.9857686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a SET generation and propagation model based on Hann-smoothing function for 65nm Flash-based FPGAs. The model has been characterized with heavyions radiation campaigns demonstrating its viable usage for circuit analysis and mitigation purposes.

引用

收藏

页码：63 / 66

页数：4

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