Self-aligned fabrication of single crystal diamond gated field emitter array

被引：8

作者：

Yamada, T ^{[1
]}

Vinod, PR ^{[1
]}

Hwang, DS ^{[1
]}

Yoshikawa, H ^{[1
]}

Shikata, S ^{[1
]}

Fujimori, N ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

关键词：

field emitter array; self-aligned process; nano-structure; sputtering; ICP etching; lift-off;

D O I：

10.1016/j.diamond.2005.06.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes a self-aligned fabrication process for diamond gated field emitter array (FEA). Utilizing the non-conformal coverage sputtering conditions of silicon oxide, an interesting "sphere on cone" structure is formed on diamond nano tip array, which is the key point of gate hole opening process. This structure causes shadowing at certain regions of side-wall during Ti/Au gate metal deposition. Removal of "sphere" by wet etching leads to the successful fabrication of a single crystalline diamond gated FEA. Scanning electron microscope observations reveal the fabrication Of a uniform emitter array with tip radius of curvature (20 nm) and gate hole (1.4 mu m). We also confirmed that no noticeable physical damage exists on tip. In field emission characteristics of the fabricated single crystal diamond gated FEA, gate voltage control of field emission Current is realized. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：2047 / 2050

页数：4

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