Optical properties of p-GaSe single crystals doped with Te

被引：17
作者：
Evtodiev, I. [1 ]
Leontie, L. [2 ]
Caraman, M. [3 ]
Stamate, M. [3 ]
Arama, E. [4 ]
机构：
[1] Moldova State Univ, MD-2009 Kishinev, Moldova
[2] Alexandru Ioan Cuza Univ, RO-700506 Iasi, Romania
[3] Univ Bacau, RO-600115 Bacau, Romania
[4] State Med & Pharmaceut Univ Nicolae Testemitanu, MD-2004 Kishinev, Moldova
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 02期
关键词：
doping profiles; gallium arsenide; II-VI semiconductors; impurity states; photoluminescence; quenching (thermal); red shift; semiconductor doping; tellurium; EXCITON ABSORPTION; GALLIUM SELENIDE; CU; LUMINESCENCE; ANISOTROPY;
D O I：
10.1063/1.3068464
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical absorption in the region of fundamental absorption edge and photoluminescence (at 78 and 293 K) of p-GaSe crystals doped with Te (0.05, 0.10, and 0.05 at. %) have been studied. At low concentrations (0.05 at. %), Te atoms liquidate structural defects in GaSe single crystals and modify their excitonic absorption and photoluminescence. For increased concentrations of 0.10 and 0.50 at. %, Te creates impurity states responsible for the red shift of the fundamental absorption edge of GaSe and appearance of new photoluminescence bands, B (at 2.000 eV) and C (at 1.700 eV). The activation energies of the thermal quenching of Te-related PL bands B and C was found to be 28 and 32 meV (for T < 150 K) and 84 and 62 meV (for T>150 K), respectively.
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页数：5
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