Optical properties of p-GaSe single crystals doped with Te

被引：17

作者：

Evtodiev, I. ^{[1
]}

Leontie, L. ^{[2
]}

Caraman, M. ^{[3
]}

Stamate, M. ^{[3
]}

Arama, E. ^{[4
]}

机构：

[1] Moldova State Univ, MD-2009 Kishinev, Moldova

[2] Alexandru Ioan Cuza Univ, RO-700506 Iasi, Romania

[3] Univ Bacau, RO-600115 Bacau, Romania

[4] State Med & Pharmaceut Univ Nicolae Testemitanu, MD-2004 Kishinev, Moldova

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 02期

关键词：

doping profiles; gallium arsenide; II-VI semiconductors; impurity states; photoluminescence; quenching (thermal); red shift; semiconductor doping; tellurium; EXCITON ABSORPTION; GALLIUM SELENIDE; CU; LUMINESCENCE; ANISOTROPY;

D O I：

10.1063/1.3068464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical absorption in the region of fundamental absorption edge and photoluminescence (at 78 and 293 K) of p-GaSe crystals doped with Te (0.05, 0.10, and 0.05 at. %) have been studied. At low concentrations (0.05 at. %), Te atoms liquidate structural defects in GaSe single crystals and modify their excitonic absorption and photoluminescence. For increased concentrations of 0.10 and 0.50 at. %, Te creates impurity states responsible for the red shift of the fundamental absorption edge of GaSe and appearance of new photoluminescence bands, B (at 2.000 eV) and C (at 1.700 eV). The activation energies of the thermal quenching of Te-related PL bands B and C was found to be 28 and 32 meV (for T < 150 K) and 84 and 62 meV (for T>150 K), respectively.

引用

页数：5

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