AMPS-1D investigations of interface properties on heterojunction silicon solar cells

被引：0

作者：

Bensmain, Asmaa ^{[1
]}

Hadjiratayoub ^{[1
]}

Bayazebentout ^{[1
]}

Benamara, Zineb ^{[1
]}

机构：

[1] Univ SidiBel Abbes, Fac Engn, Appl Microelect Lab, Sidi Bel Abbes, Algeria

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2013年 / 15卷 / 5-6期

关键词：

Interface DOS; Solar cell; heterojunction (HJ); Amorphous silicon; AMPS-1D;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous/crystalline silicon heterojunctions are very promising structures for high efficient solar cells fabricated at low temperature. However, interface defects can enhance the recombination of photogenerated carriers and limit the cell efficiency. In this work, we have investigated the interface defect density of amorphous silicon hydrogenated (a-Si:H) heterojunctions(HJs)based on both n-type and p-type c-Si substrate. We have analyzed the influence of interface defect density on the photovoltaic response of each HJ solar cell using the resources of recognized AMPS-1D simulator by means of inserting an artificial extremely thin layer with a high bulk density of states representing the interface between the amorphous and crystalline silicon interface.

引用

页码：425 / 429

页数：5

共 6 条

[1] Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films
Dauwe, S
Schmidt, J
Hezel, R
[J]. CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, : 1246 - 1249
[2] Fonash S., 1997, MANUAL AMPS ID WINDO
[3] Impact of epitaxial growth at the heterointerface of a-Si:H/c-Si solar cells
Fujiwara, Hiroyuki
Kondo, Michio
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (01)
[4] Maydell K. V., 2006, J NONCRYSTAL SOLIDS, V352
[5] Sawada T., 1994, P 1 WORD C PHOT EN C
[6] vanCleef M. W. M., 1997, 14 EUR PHOT SOL EN C

← 1 →