A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process

被引：8

作者：

Wu, JY

Wang, HH

Sze, PW

Wang, YH

Houng, MP

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Kaohsiung Inst Technol, Dept Elect Engn, Kaohsiung 80782, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 05期

关键词：

GaAs; isolation; liquid phase; oxidation;

D O I：

10.1109/55.998862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new planarized trench isolation technique for GaAs devices fabrication by a liquid phase chemical-enhanced oxidation (LPCEO) method is proposed. The LPCEO-trench-isolation technique can be operated at low temperature with a simple and low-cost process. As compared with conventional mesa isolation, the LPCEO-trench-isolation can provide better planarity and isolation properties. Finally, GaAs MOSFET's fabricated with LPCEO-trench-isolation and selective oxidized gate both by the LPCEO method are demonstrated.

引用

收藏

页码：237 / 239

页数：3

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