Defect of Te-doped GaSb layers grown by molecular beam epitaxy

被引：0

作者：

Chen Yan ^{[1
,3
]}

Deng Ai-Hong ^{[1
]}

Tang Bao ^{[2
]}

Wang Guo-Wei ^{[2
]}

Xu Ying-Qiang ^{[2
]}

Niu Zhi-Chuan ^{[2
]}

机构：

[1] Sichuan Univ, Coll Phys Sci & Technol, Dept Phys, Chengdu 610065, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[3] Mianyang Normal Univ, Dept Phys, Mianyang 621000, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2012年 / 31卷 / 04期

基金：

中国国家自然科学基金;

关键词：

atomic force microscopy (AFM); positron annihilation; X-ray diffraction;

D O I：

10.3724/SP.J.1010.2012.00298

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we present the results of positron annihilation doppler broadening spectroscopy (PADB), X-ray diffraction spectra (XRD), and atomic force microscopy (AFM) measurements on the undoped GaSb and Te-doped GaSb films grown on GaAs substrate by molecular beam epitaxy(MBE). Research shows that the S parameter is smaller in GaSb film than the bulk material. The defects in the Te-doped N-type semiconductor GaSb obtained by MBE are mainly vacancies and impurity atoms instead of complex defects.

引用

页码：298 / 301

页数：4

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