The Corbino Pseudo-MOSFET on SOI: Measurements, Model, and Applications

被引：16

作者：

Cristoloveanu, Sorin ^{[1
]}

Rao, Turumella V. Chandrasekhar ^{[2
,3
]}

Nguyen, Quang Tuan ^{[1
]}

Antoszewski, Jarek ^{[2
]}

Hovel, Harold ^{[4
]}

Gentil, Pierre ^{[1
]}

Faraone, Lorenzo ^{[2
]}

机构：

[1] INPG Minatec, Inst Microelect Electromagnetism & Photon, UMR CNRS, INPG,UJF, F-38016 Grenoble 1, France

[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Microelect Res Grp, Nedlands, WA 6009, Australia

[3] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India

[4] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 03期

关键词：

Carrier mobility; carrier scattering; magnetoresistance; pseudo-MOSFET; series resistance; SOI; SILICON-ON-INSULATOR; TRANSISTOR; EXTRACTION; MOBILITY; SIMULATION; WAFERS;

D O I：

10.1109/TED.2008.2011573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose the combination of magnetoresistance (MR) and Pseudo-MOSFET (Psi-MOSFET) measurements as an improved method for the characterization of silicon-on-insulator (SOI) materials. Measurements were performed on ultrathin SOI Psi-MOSFETs with Corbino geometry by applying high magnetic field and substrate biasing. Several models and extraction methods are developed and compared for an accurate evaluation of electron mobility. In particular, the series resistance effect is removed by using appropriate corrections. The MR mobility can be determined at low or variable electric field. The MR mobility behavior is investigated as a function of effective electric field, temperature, and film thickness. The correlation between the MR mobility and effective mobility, determined in Psi-MOSFETs at zero magnetic field, enables a detailed analysis of the electron transport and scattering mechanisms in the silicon thin film.

引用

页码：474 / 482

页数：9

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