Improved physical properties of ZnO nanostructures by In inclusion

被引：6

作者：

Chen, C. T. ^{[1
]}

Cheng, C. L. ^{[1
]}

Chen, T. T. ^{[1
]}

Chen, Y. F. ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

来源：

MATERIALS LETTERS | 2009年 / 63卷 / 05期

关键词：

Nanomaterials; Chemical vapor deposition; Zinc oxide; Indium; Defects; AL-DOPED ZNO; ZINC-OXIDE; NANOBELTS; FILMS;

D O I：

10.1016/j.matlet.2008.11.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An alternative route to improve the physical properties of ZnO nanostructures has been demonstrated. With In inclusion in the growth process. we show that the morphology of ZnO nanostructures can be changed from nanopins to nanowires. Besides, the major effects of In inclusion involve the reduction of crystallization velocity, improvement of crystalline quality, and suppression of defect density. Notably. the emission intensity can be enhanced by more than one order of magnitude. Our result therefore provides an excellent approach to obtain good crystalline quality of nanometerials for the application of optoelectronic devices. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：537 / 539

页数：3

共 16 条

[1] Yellow luminescence in n-type GaN epitaxial films [J].

Chen, HM ;

Chen, YF ;

Lee, MC ;

Feng, MS .

PHYSICAL REVIEW B, 1997, 56 (11) :6942-6946

[2] Photoelastic effect in ZnO nanorods [J].

Chen, T. T. ;

Cheng, C. L. ;

Fu, S-P ;

Chen, Y. F. .

NANOTECHNOLOGY, 2007, 18 (22)

[3] Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method -: art. no. 134701 [J].

Chen, YW ;

Liu, YC ;

Lu, SX ;

Xu, CS ;

Shao, CL ;

Wang, C ;

Zhang, JY ;

Lu, YM ;

Shen, DZ ;

Fan, XW .

JOURNAL OF CHEMICAL PHYSICS, 2005, 123 (13)

[4] Self-seeded growth and ultraviolet photoresponse properties of ZnO nanowire arrays [J].

Ghosh, R. ;

Dutta, M. ;

Basak, D. .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[5] Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification [J].

Gong, Yinyan ;

Andelman, Tamar ;

Neumark, Gertrude F. ;

O'Brien, Stephen ;

Kuskovsky, Igor L. .

NANOSCALE RESEARCH LETTERS, 2007, 2 (06) :297-302

[6]

Govender K, 2002, ADV MATER, V14, P1221, DOI 10.1002/1521-4095(20020903)14:17<1221::AID-ADMA1221>3.0.CO

[7]

2-1

[8] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[9] Impurity band characteristics near the band edge of Al-doped ZnO [J].

Hur, TB ;

Hwang, YH ;

Kim, HK .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) :1507-1510

[10] Large and abrupt optical band gap variation in In-doped ZnO [J].

Kim, KJ ;

Park, YR .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :475-477

← 1 2 →