High performance long-wave type-II superlattice infrared detectors

被引：12

作者：

Khoshakhlagh, Arezou ^{[1
]}

Hoeglund, Linda ^{[1
]}

Ting, David Z. ^{[1
]}

Hill, Cory J. ^{[1
]}

Keo, Sam A. ^{[1
]}

Soibel, Alexander ^{[1
]}

Nguyen, Jean ^{[1
]}

Gunapala, Sarath D. ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Ctr Infrared Sensors, Pasadena, CA 91109 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期

关键词：

Indium antimonides - Quality control - Fighter aircraft - Indium arsenide - Infrared detectors - III-V semiconductors;

D O I：

10.1116/1.4798485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on growth, material characterization, and device performance of infrared photodetectors based on type II InAs/GaSb superlattices using the complementary barrier infrared detector (CBIRD) design. In this paper, control steps for improvement of material quality in terms of surface, structural, and optical properties of infrared detectors grown at Jet Propulsion Laboratory are described. For a specific CBIRD studied, these quality control steps indicate high structural and optical quality of the grown material. Furthermore, single-element detector from the optimized growth conditions exhibit dark current density less than 1 x 10(-5) A/cm(2) at applied biases up to V-b = 0.36 V (T = 77 K), so this material can be utilized for focal plane arrays development. (C) 2013 American Vacuum Society.

引用

页数：4

共 15 条

[1]

Abdollahi Pour S., 2010, P SPIE, V7608

[2] Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials [J].

Bandara, Sumith ;

Maloney, Patrick ;

Baril, Neil ;

Pellegrino, Joseph ;

Tidrow, Meimei .

OPTICAL ENGINEERING, 2011, 50 (06)

[3] Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence [J].

Connelly, Blair C. ;

Metcalfe, Grace D. ;

Shen, Hongen ;

Wraback, Michael .

APPLIED PHYSICS LETTERS, 2010, 97 (25)

[4] Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials [J].

Donetsky, Dmitry ;

Belenky, Gregory ;

Svensson, Stefan ;

Suchalkin, Sergei .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

[5] Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures [J].

Donetsky, Dmitry ;

Svensson, Stefan P. ;

Vorobjev, Leonid E. ;

Belenky, Gregory .

APPLIED PHYSICS LETTERS, 2009, 95 (21)

[6] Passivation of type IIInAs/GaSb superlattice photodiodes [J].

Gin, A ;

Wei, YJ ;

Bae, JJ ;

Hood, A ;

Nah, J ;

Razeghi, M .

THIN SOLID FILMS, 2004, 447 :489-492

[7] Auger recombination in narrow-gap semiconductor superlattices incorporating antimony [J].

Grein, CH ;

Flatté, ME ;

Olesberg, JT ;

Anson, SA ;

Zhang, L ;

Boggess, TF .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7311-7316

[8]

Gunapala S. D., 2011, P SPIE, V8155

[9]

Hoglund L, 2012, P SOC PHOTO-OPT INS, V8511, DOI 10.1117/12.930136

[10] Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation [J].

Hood, Andrew ;

Delaunay, Pierre-Yves ;

Hoffman, Darin ;

Nguyen, Binh-Minh ;

Wei, Yajun ;

Razeghi, Manijeh ;

Nathan, Vaidya .

APPLIED PHYSICS LETTERS, 2007, 90 (23)

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