Development of low resistance electrical contacts for thermoelectric devices based on n-type PbTe and p-type TAGS-85 ((AgSbTe2)0.15(GeTe)0.85)

被引:61
|
作者
Singh, Ajay [1 ]
Bhattacharya, S. [1 ]
Thinaharan, C. [1 ]
Aswal, D. K. [1 ]
Gupta, S. K. [1 ]
Yakhmi, J. V. [1 ]
Bhanumurthy, K. [2 ]
机构
[1] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India
[2] Bhabha Atom Res Ctr, Div Mat Sci, Bombay 400085, Maharashtra, India
关键词
Germanium compounds - IV-VI semiconductors - Antimony compounds - Lead compounds - Silver compounds - Electric contacts;
D O I
10.1088/0022-3727/42/1/015502
中图分类号
O59 [应用物理学];
学科分类号
摘要
Diffusion bonded very low resistance electrical contacts (specific contact resistance < 10 mu Omega cm(2)) have been developed on n-type PbTe and p-type TAGS-85 ((AgSbTe2)(0.15)(GeTe)(0.85)) thermoelements. Thermoelectric devices (TEDs) having two p-n couples in series (each of four elements having 7.5 mm diameter) generated an output power of 1.2 W (at an operating current of similar to 17 A) at hot side temperature T-h = 500 degrees C and a temperature difference Delta T = 410 degrees C. Internal resistance of the devices was found to increase linearly with an increase in the number of thermoelements. The efficiency of developed TEDs was found to be 6%. The devices have been operated continuously for more than 8 months in air without any degradation of the output power.
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页数:6
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