Lead Sulfide Nanocrystal Quantum Dot Solar Cells with Trenched ZnO Fabricated via Nanoimprinting

被引：20

作者：

Kim, Sarah ^{[1
]}

Kim, Jun Kwan ^{[1
]}

Gao, Jianbo ^{[2
]}

Song, Jung Hoon ^{[1
,4
]}

An, Hey Jin ^{[1
,5
]}

You, Tae-Soo ^{[5
]}

Lee, Tae-Soo ^{[3
]}

Jeong, Jong-Ryul ^{[3
]}

Lee, Eung-Sug ^{[1
]}

Jeong, Jun-Ho ^{[1
]}

Beard, Matthew C. ^{[2
]}

Jeong, Sohee ^{[1
]}

机构：

[1] Korea Inst Machinery & Mat, Nanomech Syst Res Div, Taejon 305343, South Korea

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Chungnam Natl Univ, Grad Sch Green Energy Technol, Dept Mat Sci & Engn, Taejon 305764, South Korea

[4] Korea Adv Inst Sci & Technol, Grad Sch Nanosci & Technol WCU, Taejon 305701, South Korea

[5] Chungbuk Natl Univ, Dept Chem, Chungbuk 361763, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2013年 / 5卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

quantum dot solar cells; lead sulfide quantum dots; nanoimprinting; patterned ZnO; depleted heterojunction; nanostructured interface; PHOTOVOLTAICS; 2-NITROBENZALDEHYDE; ENHANCEMENT; FILMS; OXIDE;

D O I：

10.1021/am400443w

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The improvement of power conversion efficiency, especially current density (J(sc)), for nanocrystal quantum dot based heterojunction solar cells was realized by employing a trenched ZnO film fabricated using nanoimprint techniques. For an optimization of ZnO patterns, various patterned ZnO films were investigated using electrical and optical analysis methods by varying the line width, interpattern distance, pattern height, and residual layer. Analyzing the features of patterned ZnO films allowed us to simultaneously optimize both the pronounced electrical effects as well as optical properties. Consequently, we achieved an enhancement in J(sc) from 7.82 to 12.5 mA cm(-2) by adopting the patterned ZnO with optimized trenched shape.

引用

页码：3803 / 3808

页数：6

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