Temperature-dependent transport in suspended graphene

被引:974
作者
Bolotin, K. I. [1 ]
Sikes, K. J. [2 ]
Hone, J. [3 ]
Stormer, H. L. [1 ,2 ,4 ]
Kim, P. [1 ]
机构
[1] Columbia Univ, Dept Phys, New York, NY 10027 USA
[2] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA
[3] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA
[4] Bell Labs, Alcatel Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1103/PhysRevLett.101.096802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5 < T < 240 K. At T similar to 5 K transport is near-ballistic in a device of similar to 2 Am dimension and a mobility similar to 170 000 cm(2)/V s. At large carrier density, n > 0.5 X 10(11) cm(-2), the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T = 240 K the mobility is similar to 120000 cm(2)/V s, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity < 108 cm(-2).
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页数:4
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