Kondo temperature of a quantum dot

被引:3
|
作者
Nah, Seungjoo [1 ]
Pustilnik, Michael [1 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 23期
关键词
COULOMB-BLOCKADE; ANDERSON MODEL; CHARGE;
D O I
10.1103/PhysRevB.85.235311
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the dependence of the Kondo temperature on the gate voltage in a strongly blockaded quantum dot with a small single-particle level spacing. We show that the dependence cannot be fitted to that of the Anderson impurity model with the gate voltage-independent level width. The effect originates in high-order tunneling processes, which make a dominant contribution to the exchange amplitude when the gate voltage is tuned away from the middle of the Coulomb blockade valley.
引用
收藏
页数:5
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