Microscopic view on Landau level broadening mechanisms in graphene

被引:28
作者
Funk, Hannah [1 ]
Knorr, Andreas [1 ]
Wendler, Florian [2 ]
Malic, Ermin [2 ]
机构
[1] Tech Univ Berlin, Inst Theoret Phys Nonlinear Opt & Quantum Elect, Berlin, Germany
[2] Chalmers Univ Technol, Dept Appl Phys, S-41296 Gothenburg, Sweden
关键词
QUANTUM TRANSPORT; CARRIER DYNAMICS; SCATTERING;
D O I
10.1103/PhysRevB.92.205428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Placing a two-dimensional sheet of graphene in an external magnetic field the continuous electronic band structure is discretized due to Landau quantization. The resulting optical transitions are subject to a broadening, which can lead to a significant overlap of Landau levels. We investigate the possible microscopic processes that could cause a broadening of the corresponding peaks in the absorption spectrum of Landau-quantized graphene: (i) radiative decay, (ii) Coulomb interaction, (iii) optical phonons, (iv) acoustic phonons, and (v) impurities. Since recent experiments have shown that independent of the magnetic field the resolvable number of Landau levels is constant, we put a special focus on the dependence of the broadening on the external magnetic field B and the Landau level index n. Our calculations reveal the impurities to be the crucial broadening mechanism, where different regimes of well separated and densely spaced Landau levels need to be taken into account. Furthermore, carrier-carrier and carrier-phonon scattering give rise to a very specific dependence on the Landau level index n that has not been observed yet.
引用
收藏
页数:11
相关论文
共 50 条
  • [41] Spin mixing between subbands and extraordinary Landau-level shift in wide HgTe quantum wells
    Dobretsova, A. A.
    Chepelianskii, A. D.
    Mikhailov, N. N.
    Kvon, Z. D.
    PHYSICAL REVIEW B, 2018, 98 (15)
  • [42] The Features of Collective Level Shift and Line Broadening in a Fabry-Perot Microcavity and Near the Conducting Surface
    Kuraptsev, Alexei S.
    Sokolov, Igor M.
    2018 EUROPEAN FREQUENCY AND TIME FORUM (EFTF), 2018, : 369 - 373
  • [43] Landau-level depopulation and high-field magneto-resistance of open quantum dots
    Akis, R
    Ramamoorthy, A
    Bird, JP
    Maemoto, T
    Ferry, DK
    Inoue, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2) : 197 - 201
  • [44] Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential
    Bovkun, L. S.
    Ikonnikov, A. V.
    Aleshkin, V. Ya.
    Krishtopenko, S. S.
    Antonov, A. V.
    Spirin, K. E.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    Gavrilenko, V. I.
    SEMICONDUCTORS, 2017, 51 (12) : 1562 - 1570
  • [45] Low-energy band structure in Bernal stacked six-layer graphene: Landau fan diagram and resistance ridge
    Nakasuga, Tomoaki
    Tajima, Shingo
    Hirahara, Taiki
    Ebisuoka, Ryoya
    Oka, Takushi
    Watanabe, Kenji
    Taniguchi, Takashi
    Yagi, Ryuta
    PHYSICAL REVIEW B, 2019, 99 (08)
  • [46] A Full Field-of-View Online Visual Ferrograph Debris Detector Based on Reflected Light Microscopic Imaging
    Li, Bo
    Wu, Wei
    Zhou, Mi
    Xi, Yinhu
    Wei, Hangxin
    Mao, Junhong
    IEEE SENSORS JOURNAL, 2021, 21 (15) : 16584 - 16597
  • [47] Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation
    Stanishev, Vallery
    Armakavicius, Nerijus
    Bouhafs, Chamseddine
    Coletti, Camilla
    Kuhne, Philipp
    Ivanov, Ivan G.
    Zakharov, Alexei A.
    Yakimova, Rositsa
    Darakchieva, Vanya
    APPLIED SCIENCES-BASEL, 2021, 11 (04): : 1 - 16
  • [48] Angular dependence of magnetoresistance in strongly anisotropic quasi-two-dimensional metals: Influence of Landau-level shape
    Grigoriev, P. D.
    Mogilyuk, T. I.
    PHYSICAL REVIEW B, 2014, 90 (11):
  • [49] Chemical Understanding of the Mechanisms Involved in Mitigation of Charged Impurity Effects by Polar Molecules on Graphene
    Worley, Barrett C.
    Haws, Ryan T.
    Rossky, Peter J.
    Dodabalapur, Ananth
    JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (23) : 12909 - 12916
  • [50] Charge doping of graphene in metal/graphene/dielectric sandwich structures evaluated by C-1s core level photoemission spectroscopy
    Dahal, Arjun
    Addou, Rafik
    Coy-Diaz, Horacio
    Lallo, James
    Batzill, Matthias
    APL MATERIALS, 2013, 1 (04):