Oxide Thin-Film Transistors Fabricated Using Biodegradable Gate Dielectric Layer of Chicken Albumen

被引：27

作者：

Jeon, Da-Bin ^{[1
]}

Bak, Jun-Yong ^{[1
]}

Yoon, Sung-Min ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 12期

关键词：

ROOM-TEMPERATURE; PAPER; SEMICONDUCTOR;

D O I：

10.7567/JJAP.52.128002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An oxide thin-film transistor (TFT) using chicken albumen as gate dielectric on paper substrate was demonstrated. Chicken albumen, which was directly extracted from chicken egg white, was deposited as gate dielectric layer. An In-Ga-Zn-O was chosen as an active channel. The TFT feasibilities were successfully confirmed, in which channel mobility and subthreshold slope of the TFT were 6.48 cm(2) V-1 s(-1) and 1.28 V/s, respectively. This is the first report on the device configuration combining the biodegradable gate insulator and oxide semiconducting channel. (C) 2013 The Japan-Society-of Applied Physics

引用

页数：3

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