Structural properties of porous In0.08Ga0.92N synthesized using photoelectrochemical etching

This paper presents the morphology and structural studies of as-grown and porous In0.08Ga0.92N/AlN/Si thin films prepared by UV-assisted electrochemical etching under various etching durations. The morphology and structural properties of the as-grown and porous thin films were investigated. The atomic force microscope, field emission scanning electron microscope images, and X-ray diffraction measurements revealed that the films have smooth and uniform surface over a large region with wurtzite phase. The diffraction peaks of the post-etched samples were shifted to a higher angle region compared to the pre-etched sample indicating a change in composition of InGaN layer as In incorporation of the layer decreases, subsequently decreasing the lattice constant c (approach to c(GaN)) of the alloy with compressive strain. (C) 2013 Elsevier B.V. All rights reserved.