Atomic-scale visualization of oxide thin-film surfaces

被引:17
作者
Iwaya, Katsuya [1 ,2 ]
Ohsawa, Takeo [1 ,3 ]
Shimizu, Ryota [1 ,4 ]
Okada, Yoshinori [1 ]
Hitosugi, Taro [1 ,4 ]
机构
[1] Tohoku Univ, AIMR, Sendai, Miyagi, Japan
[2] RIKEN, Ctr Emergent Matter Sci, Saitama, Japan
[3] Natl Inst Mat Res, Ibaraki, Japan
[4] Tokyo Inst Technol, Sch Mat & Chem Technol, Tokyo, Japan
关键词
Oxide thin films; scanning tunneling microscopy; pulsed laser deposition; ANATASE TIO2; SRTIO3; SUPERCONDUCTIVITY; GROWTH;
D O I
10.1080/14686996.2018.1442616
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples. [GRAPHICS]
引用
收藏
页码:282 / 290
页数:9
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