Enhanced energy storage performance of BNT-ST based ceramics under low electric field via domain engineering

被引:33
作者
Chen, Xiaoyu [1 ]
Zhang, Dezhou [1 ]
Liu, Haibo [1 ]
Zhou, Chuang [1 ]
Shen, Meng [2 ]
Liu, Pin [3 ]
Cai, Wei [1 ]
Zhang, Haibo [4 ,5 ,6 ]
Fan, Baoyan [1 ,2 ]
Liu, Xiaoyan [1 ]
机构
[1] Chongqing Univ Sci & Technol, Chongqing Key Lab Nano Micro Composites & Devices, Coll Met & Mat Engn, Chongqing 401331, Peoples R China
[2] Hubei Univ, Sch Phys & Elect Sci, Hubei Key Lab Ferro & Piezoelect Mat & Devices, Wuhan 430062, Peoples R China
[3] Nanjing Univ Informat Sci & Technol NUIST, Sch Chem & Mat Sci, Nanjing 210044, Peoples R China
[4] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
[5] Ind Univ Ho Chi Minh City, Fac Chem Engn, Ho Chi Minh City 71420, Vietnam
[6] Tharnrnasat Univ, Fac Sci & Technol, Dept Chem, Pathum Thani 12120, Thailand
基金
美国国家科学基金会;
关键词
NBT-ST; Energy storage; Low electric field; Domain engineering; DENSITY; COMPOSITES; STABILITY; GAN;
D O I
10.1016/j.ceramint.2022.07.015
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Lead-free bulk ceramics for advanced pulse power capacitors possess low recoverable energy storage density (W-rec) under low electric field. Sodium bismuth titanate (Bi0.5Na0.5TiO3, BNT)-based ferroelectrics have attracted great attention due to their large maximum polarization (P-m) and high power density. The BNT-ST: xAlN ceramics are designed and fabricated to get high W-rec and large P-m under low electric field simultaneously. An excellent large P-m (49.04 mu C/cm(2)) and W-rec (2.07 J/cm(3)) under low electric field (160 kV/cm) are acquired in BNT-ST: 0.1 wt% AlN. The domain structure evolution and polarization switching are investigated systematically using piezoresponse force microscopy (PFM). The introduction of AlN promotes the formation of thermal conductive network and the crystallization of ceramics, thus improving thermal stability and increasing P-m significantly. The higher density of domain walls and the larger negative built-in voltage may be beneficial to increase breakdown field strength (E-b), while the more 180. domains induce by electric field and the better domain switching behavior contribute to a significant increase in P-m. The enhanced E-b and super high Pm are favorable for obtaining high Wrec under low electric field which will boost the application of BNT-based ferroelectrics in advanced pulse power capacitors.
引用
收藏
页码:31381 / 31388
页数:8
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