Surface Charge Transfer Doping of III-V Nanostructures

被引：20

作者：

Takei, Kuniharu ^{[1
,2
,3
]}

Kapadia, Rehan ^{[1
,2
,3
]}

Li, Yongjun ^{[1
]}

Plis, E. ^{[4
]}

Krishna, Sanjay ^{[4
]}

Javey, Ali ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ New Mexico, Albuquerque, NM 87106 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2013年 / 117卷 / 34期

关键词：

NANOSCALE; SEMICONDUCTORS; SCALE;

D O I：

10.1021/jp406174r

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface charge transfer is presented as an effective doping technique for III-V nanostructures. We generalize that the technique is applicable to nanoscale semiconductors in the limit where carriers are quantum confined. As a proof-of-concept, potassium surface charge transfer doping is carried out for one-dimensional (1D) and two-dimensional (2D) In As on Si/SiO2 substrates. Experiments and simulations show that equivalent dopant areal dose of up to similar to 2 x 10(12) cm(-2) is obtained, which is sufficient for degenerate doping of InAs nanostructures. This work presents a new pathway for controllable doping of inorganic semiconductors with limits fundamentally different from those of substitutional doping.

引用

页码：17845 / 17849

页数：5

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