Modification of the properties of light-emitting structures fabricated by solid phase epitaxial technique at the erbium and oxygen ion implantation into (111)-oriented silicon substrates

被引：0

作者：

Sobolev, NA ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 2002年 / 66卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：272 / 275

页数：4

共 13 条

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[3] Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon p-n junction
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[J]. APPLIED PHYSICS LETTERS, 1998, 72 (10) : 1223 - 1225
[4] EMELYANOV AM, 2000, FIZ TEKH POLUPROV, V34, P965
[5] Mechanism and performance of forward and reverse bias electroluminescence at 1.54 mu m from Er-doped Si diodes
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[J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) : 2784 - 2793
[6] Defect structure of erbium-doped ⟨111⟩ silicon layers formed by solid phase epitaxy
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 173 (03) : 319 - 325
[7] Sobolev NA, 1998, MATER RES SOC SYMP P, V486, P139
[8] Avalanche breakdown-related electroluminescence in single crystal Si:Er:O
Sobolev, NA
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[J]. APPLIED PHYSICS LETTERS, 1997, 71 (14) : 1930 - 1932
[9] Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si:Er:O diodes
Sobolev, NA
Nikolaev, YA
Emel'yanov, AM
Shtel'makh, KF
Khakuashev, PE
Trishenkov, MA
[J]. JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 315 - 319
[10] SOBOLEV NA, 2000, FIZ TEKH POLUPROV, V34, P1069

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