A 3.5GHz fully integrated Power Amplifier module

被引：2

作者：

Blount, P ^{[1
]}

Cuggino, J ^{[1
]}

McPhee, J ^{[1
]}

机构：

[1] Hittite Microwave Corp, Chelmsford, MA 01824 USA

来源：

GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001 | 2001年

关键词：

D O I：

10.1109/GAAS.2001.964358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a state-of-the-art Power Amplifier module operating at S-band. The power module consists of an InGaP HBT MMIC amplifier at 3.5GHz with the necessary bias and output matching networks integrated using standard surface mount components. As such the module is truly 50Omega matched at input and output ports with no external circuitry required. The technology chosen for the module is a low cost, high volume ball grid array (BGA) technology, which is widely available. The power module gave a peak output power of 27.5dBm and a power added efficiency of 44% from a single +5V supply.

引用

页码：111 / 114

页数：4

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