Hot-Carrier Injection Antennas with Hemispherical AgOx@Ag Architecture for Boosting the Efficiency of Perovskite Solar Cells

被引:23
作者
Du, Jinyue [1 ]
Zhang, Yuhong [1 ]
Yang, Meifang [1 ]
Han, Donglai [2 ]
Fan, Lin [3 ,4 ]
Sui, Yingrui [3 ,4 ]
Yang, Jinghai [3 ,4 ]
Yang, Lili [3 ,4 ]
Wang, Fengyou [3 ,4 ]
机构
[1] Jilin Normal Univ, Key Lab Funct Mat Phys & Chem, Minist Educ, Changchun 130103, Peoples R China
[2] Changchun Univ Sci & Technol, Sch Mat Sci & Engn, Changchun 130022, Peoples R China
[3] Jilin Normal Univ, Key Lab Funct Mat Phys & Chem, Natl Demonstrat Ctr Expt Phys Educ, Minist Educ, Changchun 130103, Peoples R China
[4] Jilin Normal Univ, Key Lab Preparat & Applicat Environm Friendly Mat, Minist Educ, Changchun 130103, Peoples R China
基金
中国国家自然科学基金;
关键词
hot-carrier injection; perovskite solar cells; electron-transport layer; light management; decomposition; ENHANCEMENT; PLASMONICS; LAYER;
D O I
10.1021/acsami.0c11250
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the past few years, the power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) have increased from 3.81 to 25.2%, surpassing those of all almost all thin films solar cells. For high-performance PSCs, it is pivotal to finely regulate the charge dynamics and light management between perovskite and charge-transfer materials to balance the trade-off between optical and electrical properties. In this study, a hemispherical core-shell silver oxide (AgOx) @ silver nanoparticles (Ag NPs) were grown onto the surface of the mesoporous titanium dioxide (m-TiO2) electron-transport layer (ETL) to improve the photogenerated charge transfer without sacrificing the stability of the devices. The results show that the electrical properties of m-TiO2 have been enhanced owing to the injection of a hot carrier in Ag NPs into the m-TiO2 ETL filling the trap states of m-TiO2. However, AgOx on the Ag NP surfaces can isolate the touch between Ag NPs and perovskite, thereby prohibiting the perovskite decomposition. Compared with the control device, the PCE was increased from 17.87 to 20.33% for the device with HOAPs. In the meantime, the long-term stability of the PSCs is not sacrificed, which is pivotal for fabricating PSCs and optoelectronic devices.
引用
收藏
页码:41446 / 41453
页数:8
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