Characterization of contact electromechanics through capacitance-voltage measurements and simulations

被引:112
作者
Chan, EK [1 ]
Garikipati, K [1 ]
Dutton, RW [1 ]
机构
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
关键词
charge; contact; electromechanical; electrostatic; material properties; surface;
D O I
10.1109/84.767117
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrostatically actuated polysilicon beams fabricated in the multiuser MEMS process (MUMPs) are studied, with an emphasis on the behavior when the beam is in contact with an underlying silicon nitride dielectric layer. Detailed two-dimensional (2-D) electromechanical simulations, including the mechanical effects of stepups, stress-stiffening and contact, as well as the electrical effects of fringing fields and finite beam thickness, are performed. Comparisons are made to quasi-2-D and three-dimensional simulations. Pull-in voltage and capacitance-voltage measurements together with 2-D simulations are used to extract material properties. The electromechanical system is used to monitor charge buildup in the nitride which is modeled by a charge trapping model. Surface effects are included in the simulation using a compressible contact-surface model. Monte Carlo simulations reveal the limits of simulation accuracy due to the limited resolution of input parameters.
引用
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页码:208 / 217
页数:10
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