Large Rashba spin-orbit splitting in gate controlled n-type modulation doped HgTe/Hg0.3Cd0.7-xMnxTe quantum wells

被引：5
|
作者：
Gui, YS [1 ]
Liu, J [1 ]
Daumer, V [1 ]
Becker, CR [1 ]
Buhmann, H [1 ]
Molenkamp, LW [1 ]
机构：
[1] Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期
关键词：
Rashba spin-orbit splitting; II-VI quantum well; magnetotransport;
D O I：
10.1016/S1386-9477(01)00320-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on Rashba spin-orbit splitting in a series of gated n-type HgTe/Hg0.3Cd0.7-xMnxTe quantum wells with an inverted band structure. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov-de Haas oscillations, we determine the gate voltage dependence of the spin-orbit coupling parameter beta, which can be tuned by a factor of about 5 in the narrow spacer sample, Our experimental data and its analysis show that the Hg0.3Cd0.7-xMnxTe layer strongly enhances the spin-orbit splitting. when close enough to the two-dimensional electron gas. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：416 / 419
页数：4
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