First Principle Simulations of Various Magnetic Tunnel Junctions for Applications in Magnetoresistive Random Access Memories

被引：34

作者：

Chakraverty, Mayank ^{[1
,2
]}

Kittur, Harish M. ^{[3
]}

Kumar, P. Arun ^{[3
]}

机构：

[1] IBM Corp, Bangalore 560066, Karnataka, India

[2] Manipal Univ, Manipal 576104, Karnataka, India

[3] VIT Univ, Sch Elect Engn, Vellore 632014, Tamil Nadu, India

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2013年 / 12卷 / 06期

关键词：

Density functional theory (DFT); local spin density approximation (LSDA); magnetic tunnel junction (MTJ); MRAM; ROOM-TEMPERATURE;

D O I：

10.1109/TNANO.2013.2274902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the first principle simulations of Fe/MgO/Fe, Fe/Y2O3/Fe, Fe/HfO2/Fe, and Fe/Al2O3/Fe magnetic tunnel junctions (MTJs). From the device-level and circuit-level simulations carried out in this paper, the Fe/MgO/Fe configuration has been found to be the best. From the device-level simulations, all the four configurations of MTJs have been compared with regards to the bias dependence of tunnel magneto-resistance ratios (TMRs), insulator thickness dependence of TMR, and insulator thickness dependence of parallel and antiparallel state resistances. Finally, from the circuit-level simulations, the static and switching power dissipations have been computed along with the delay time estimation.

引用

页码：971 / 977

页数：7

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