Effects of indium doping on the structural and optical properties of CdSe thin films deposited by chemical bath

被引：0

作者：

Gonzalez, A. M. Perez ^{[1
]}

Arreola, I. V. ^{[1
]}

机构：

[1] Univ Popular Autonoma Estado Puebla, Puebla 72160, Mexico

来源：

REVISTA MEXICANA DE FISICA | 2009年 / 55卷 / 01期

关键词：

Indium doping; CdSe; thin films; optical properties; structural properties; ELECTRICAL PROPERTIES; CADMIUM TELLURIDE; ENERGY; CONDUCTIVITY;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thin films of n-type CdSe have been grown on Corning glass substrate by chemical bath deposition, prepared with Sodium Seleno-Sulphate (Na2SSeO3), Cadmium Chloride (CdCl2) and Indium Tri-Chloride (InCl3), mixed in an aqueous environment. The effects of different In doping concentrations have been investigated. X-ray diffraction spectra show that at low In concentration only the CdSe lattice is present in the deposited film, whereas CdIn2Se4 and InSe compounds are obtained at higher In concentrations. Optical properties have been calculated from transmission spectra and photoluminescence measurements. From transmission spectra, the absorption coefficient and optical gap were obtained; photoluminescence spectra show band-band recombination from 10 K to room temperature.

引用

页码：51 / 54

页数：4

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