Vibration-Assisted Crystallization Improves Organic/Dielectric Interface in Organic Thin-Film Transistors

被引：69

作者：

Diemer, Peter J. ^{[1
]}

Lyle, Christopher R. ^{[1
]}

Mei, Yaochuan ^{[1
]}

Sutton, Christopher ^{[2
]}

Payne, Marcia M. ^{[3
]}

Anthony, John E. ^{[3
]}

Coropceanu, Veaceslav ^{[2
]}

Bredas, Jean-Luc ^{[2
]}

Jurchescu, Oana D. ^{[1
]}

机构：

[1] Wake Forest Univ, Dept Phys, Winston Salem, NC 27109 USA

[2] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

[3] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 48期

基金：

美国国家科学基金会;

关键词：

organic field-effect transistors; organic semiconductors; high mobility; traps; FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; PERFORMANCE; ELECTRONICS;

D O I：

10.1002/adma.201302838

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Solution processability of organic semiconductors allows high-throughput fabrication on arbitrary substrates at low-cost, but the films often exhibit low performance. Here, we report on a new method for device fabrication, vibration assisted crystallization (VAC) that produces superior films, which approach the fundamental performance limits shown in corresponding single-crystal measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：6956 / 6962

页数：7

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