Thermal resistance of CNTs-based thermal interface material for high power solid state device packages

被引：18

作者：

Lee, Y. T. ^{[1
]}

Shanmugan, S. ^{[2
]}

Mutharasu, D. ^{[2
]}

机构：

[1] Intel Corp, Technol Dev, Bayan Lepas, Penang, Malaysia

[2] Univ Sains Malaysia, Sch Phys, Nano Optoelect Res Lab, George Town 11800, Malaysia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 114卷 / 04期

关键词：

ALIGNED CARBON NANOTUBES; CHEMICAL-VAPOR-DEPOSITION; ARRAYS; SUBSTRATE; TRANSPORT; GROWTH; FILMS;

D O I：

10.1007/s00339-013-7676-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertically aligned carbon nanotubes (VACNTs) were synthesized over copper substrate. The diameter and length of the CNTs were 100 nm and 2-3 mu m, respectively. Synthesis of CNTs was confirmed by Raman spectrum and verified by TEM as multi walled CNTs. SEM images showed the vertically aligned CNTs over Cu substrate. Strengthening of CNTs was performed by filling with Cu and SU-8 epoxy sealant in gap between the CNTs. The observed density was high for epoxy sealed CNTs. The bending ability of CNTs was checked and observed as low for epoxy sealed CNTs. The thermal resistance of the samples was measured by JESD51-2 standard for various loads. The observed resistance was low (0.277 cm(2) K/W) for epoxy sealed CNTs at 1100 kPa. The calculated resistance of CNTs alone was 0.097 cm(2) K/W for epoxy sealed at 900 kPa.

引用

页码：1145 / 1152

页数：8

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