Band gap study on zinc-doped cadmium sulphide

Photoconductivity studies on cadium sulphide (CdS) crystals grown by chemical vapour transport method were carried out at room temperature (300 degrees C) over the spectral range between the near ultraviolet and the near infrared. Three samples of CdS crystals, vii. undoped CdS crystal, 0.5 ppm zinc doped CdS crystal, and 1 ppm zinc doped CdS crystal were used. The variation of photocurrent as a function of applied field, intensity of the incident light, response time, and incident wavelength was studied. It was observed that the band gap decreased linearly as doping concentration increased. This is interpreted as being due to doped impurity atoms acting as traps very close to the conduction band edge. The rise and decay times also decreased linearly as doping concentration increased This has been interpreted due to more free charge carriers being created in the crystal with increase in doping concentration, thereby making the crystal more photosensitive.