Dislocation formation from a surface step in semiconductors:: An ab initio study -: art. no. 092105

被引：44
作者：
Godet, J
Brochard, S
Pizzagalli, L
Beauchamp, P
Soler, JM
机构：
[1] Univ Poitiers, UMR 6630, Met Phys Lab, F-86962 Futuroscope, France
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
来源：
PHYSICAL REVIEW B | 2006年 / 73卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.73.092105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large-scale first-principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60 degrees dislocations for both tensile and compressive deformations. We have also examined the effect of surface and step termination on the plastic mechanisms.
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