Effect of Substrate Temperature on the AZO Films Grown by AACVD Technique

Al-doped ZnO thin films (AZO) fabrication technique with low cost, large area, high deposition rate, well uniformity and excellent optical and electrical properties has been one of the most important aims in the transparent conductive oxide films research field. AZO thin films were grown on the glass substrates by cold-wall aerosol-assisted chemical vapour deposition (AACVD) method in this paper. Structural, optical and electrical properties of AZO films grown at different substrate temperature were investigated in detail. The samples were tested by X-Ray Diffraction, Atomic Force Microscopy, UV-Vis and Photoluminescence Spectroscopy. Results indicate that influence of the substrate temperature on the preferred orientation growth of AZO films appears undulant change during the course of AZO film deposited by AACVD. Distinct electrical properties transition takes place at around 400 degrees C. Optical properties and preferred orientation growth of the ZnO films transition take place at around 450 degrees C. Microcosmic mechanism was discussed that the effect of substrate temperature on the structural, optical and electrical properties of AZO films grown by AACVD method. Sheet resistance and the average transmittances in the visible regions of AZO films grown at 400 degrees C is about 190 Omega/square, 80% respectively.