Modeling and simulation of GaN based QW LED for UV emission

In this paper, a simulation approach has been adopted to study GaN based Multi Quantum Well Ultra Violet Light Emitting Diodes (MQWUV-LED). Under simulation, a 6 x 6 Kohn-Luttinger Hamiltonian has been solved to determine the wavefunctions, probability density of the charge carriers (for finding the localization of the charge carriers) and their discrete energy levels in the valence bands of the LED heterostructure. The normalized optical gain, luminous power and power spectral density for the device have been simulated. The well and barrier width effect on the luminous power and temperature effect on emission wavelength corresponding to maximum gain have also been studied. The outcome of the simulation suggests that the generated light has spectral wavelength peak in the UV range at 349 nm. The optical gain of the quantum wells near the n-side of the heterostructure is found slightly lower due to the poor mobility and injection of holes towards n-side. (C) 2018 Elsevier GmbH. All rights reserved.