Enhanced Light Extraction Efficiency of GaN-Based LED with ZnO Nanorod Grown on Ga-Doped ZnO Seed Layer

被引：14

作者：

Hui, Kwun Nam ^{[1
]}

Hui, Kwan San ^{[2
,3
]}

Xia, Qixun ^{[1
]}

Cuong, Tran Viet ^{[4
]}

Cho, Young-Rae ^{[1
]}

Singh, Jai ^{[5
,6
]}

Kumar, Pushpendra ^{[7
]}

Kim, Eui Jung ^{[4
]}

机构：

[1] Pusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea

[2] City Univ Hong Kong, Dept Syst Engn & Engn Management, Kowloon Tong, Hong Kong, Peoples R China

[3] Hanyang Univ, Dept Mech Engn, Seoul 133791, South Korea

[4] Univ Ulsan, Sch Chem Engn & Bioengn, Ulsan 680749, South Korea

[5] Sejong Univ, Inst Nano & Adv Mat, Seoul, South Korea

[6] Sejong Univ, Graphene Res Inst, Seoul, South Korea

[7] Acad Sinica, Inst Atom & Mol Sci, Taipei 11529, Taiwan

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILMS;

D O I：

10.1149/2.005306ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High density and narrow zinc oxide nanorod (ZnO NR) arrays (aspect ratio similar to 18.9) were hydrothermally grown on gallium-doped ZnO (GZO) seed layer (3 wt% Ga-doping). Light-emitting diode (LED) fabricated with ZnO NR arrays grown on GZO seed showed marked 19% and 70% increases in light output power at 20 mA of driving current compared to that of LED with ZnO NR arrays grown on ZnO seed layer and reference LED. The significant enhancement of light output power is attributed to high density and surface-to-volume ratios of NR arrays as well as to enhanced multiple photons scattering at the NR surface. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.005306ssl] All rights reserved.

引用

页码：Q43 / Q46

页数：4

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