Effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties for sol-gel grown MoS2/Si nanowire/Si devices

被引：1
作者：
Wu, Cheng-You [1 ]
Lin, Yow-Jon [1 ]
Chang, Hsing-Cheng [2 ]
Chen, Ya-Hui [3 ]
机构：
[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan
[2] Feng Chia Univ, Dept Automat Control Engn, Taichung 407, Taiwan
[3] Feng Chia Univ, Precis Instrument Support Ctr, Taichung 407, Taiwan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 07期
关键词：
SURFACE PASSIVATION; INTERFACE MODIFICATION; ELECTRICAL-PROPERTIES; CELLS; IRRADIATION; MONOLAYER; DIODES; SIO2;
D O I：
10.1007/s10854-018-8577-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties of a MoS2/Si nanowire (SiNW)/n-Si device are studied. The MoS2 thin films are prepared using the sol-gel method. The thermionic emission-diffusion model is the dominant process in the MoS2/SiNW/n-Si device when there is no H2O2 treatment. However, carrier transport in MoS2/SiNW/n-Si devices that are subject to H2O2 treatment is dominated by thermionic emission, so it demonstrates reliable rectification. Passivation of the SiNW surface increases the responsivity to solar irradiation. There is a low trap density at the MoS2/SiNW interfaces so the increase in photocurrent density for the MoS2/SiNW/n-Si device that is subject to H2O2 treatment is due to greater internal power conversion efficiency. The photo-response results for MoS2/SiNW/n-Si devices that are subject to (are not subject to) H2O2 treatment confirm that the decay in the photocurrent is due to the dominance of long-lifetime (short-lifetime) charge trapping. MoS2/SiNW/n-Si devices that are subject to H2O2 treatment exhibit reliable responsivity to solar irradiation.
引用
收藏
页码：6032 / 6039
页数：8
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