Influence of Al content on the optical band-gap enhancement and lattice structure of (Ga1-xAlx)2O3 single crystal

被引：10

作者：

Bhaumik, Indranil ^{[1
,2
]}

Soharab, M. ^{[1
,2
]}

Bhatt, R. ^{[1
,2
]}

Saxena, A. ^{[1
]}

Sah, S. ^{[3
]}

Karnal, A. K. ^{[1
,2
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Laser & Funct Mat Div, Crystal Growth & Instrumentat Sect, Indore 452013, India

[2] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400094, Maharashtra, India

[3] Shri GS Inst Technol & Sci, Dept Appl Phys & Optoelect, Indore 452003, India

来源：

OPTICAL MATERIALS | 2020年 / 109卷

关键词：

Optical materials; Transparent conducting oxide; Single crystal; Crystal structure; Bandgap; BETA-GA2O3; GROWTH;

D O I：

10.1016/j.optmat.2020.110351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals of undoped, 4.8, 9.3 and 14.1 at.% Al substituted beta-Ga2O3 have been grown by optical floating zone technique. It has been observed that it is not possible to grow good quality single crystal with higher Al content unlike the thin film grown by pulsed laser deposition [Appl. Phys. Lett. 105 (2014) 162107]. It has been found that the incorporation of Al in beta-Ga2O3 has resulted a shrinkage in the lattice parameters and volume. This leads to a systematic increase in the band gap of the material and broadens the transmission window in the deep UV range up to 5.08 eV for 14.1 at.% of Al substitution in the lattice.

引用

页数：6

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