Single Pulse Laser-Induced Phase Transitions of PLD-Deposited Ge2Sb2Te5 Films

被引：38

作者：

Lu, Hongbing ^{[1
,2
]}

Thelander, Erik ^{[1
]}

Gerlach, Juergen W. ^{[1
]}

Decker, Ulrich ^{[1
]}

Zhu, Benpeng ^{[2
,3
]}

Rauschenbach, Bernd ^{[1
,4
]}

机构：

[1] Leibniz Inst Surface Modificat IOM, D-04318 Leipzig, Germany

[2] Hubei Univ, Fac Mat Sci & Engn, Key Lab Green Preparat & Applicat Funct Mat, Minist Of Educ, Wuhan 430062, Peoples R China

[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[4] Univ Leipzig, Inst Expt Phys 1, D-04308 Leipzig, Germany

来源：

ADVANCED FUNCTIONAL MATERIALS | 2013年 / 23卷 / 29期

基金：

中国国家自然科学基金;

关键词：

Ge2Sb2; (5); phase-change materials; laser irradiation; reflectivity; structures; THIN-FILMS; CRYSTALLIZATION BEHAVIOR; OPTICAL-PROPERTIES; TEMPERATURE;

D O I：

10.1002/adfm.201202665

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Phase transformations between amorphous and crystallized states are induced by irradiation with a single nanosecond laser pulse in Ge2Sb2Te5 films grown by pulsed laser deposition. By adjusting the laser fluence, the two different phases are obtained and can be distinguished by their different optical reflectivity. The effect of laser fluence on the crystalline nature of the films is studied in detail. Large structural differences between the laser-irradiated and thermally annealed films are revealed, due to the high heating rate and short duration of the laser pulse. X-ray reflectivity measurements show a density increase of 3.58% upon laser-induced crystallization.

引用

页码：3621 / 3627

页数：7

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