Ferroelectric and dielectric properties of vanadium-doped Ba(Ti0.90Zr0.10)O3 ceramics

被引:45
作者
Moura, F. [2 ]
Simoes, A. Z. [3 ]
Cavalcante, L. S. [1 ]
Zaghete, M. A. [2 ]
Varela, J. A. [2 ]
Longo, E. [2 ]
机构
[1] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil
[2] Univ Estadual Paulista, Inst Quim, Lab Interdisciplinar Eletroquim & Ceram, Dept Fisicoquim, BR-14801907 Araraquara, SP, Brazil
[3] Univ Estadual Paulista, Dept Quim, Fac Ciencias, BR-17033360 Bauru, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
Ceramics; Ferroelectrics; Solid-state reactions; Chemical synthesis; Vacancy information;
D O I
10.1016/j.jallcom.2007.11.057
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ba(Zr0.10Ti0.90)O-3 (BZT) and V substituted BZT ceramics (BZT:V) were prepared by mixed oxide method and polymeric precursor method. The effect of V5+ addition in the BZT lattice was evaluated by X-ray diffraction (XRD) and Fourier transform Raman (FT-Raman) spectroscopy. When vanadium is introduced in the BZT lattice there is a decrease in the grain size. Substitution of vanadium on B-site broads the dielectric permittivity curve. That can be caused by repulsion of vanadium with their next nearest neighbors leading to a structure which is tetragonally distorted. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:L15 / L18
页数:4
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