Gate-Last MoS2 Transistors for Active-Matrix Display Driving Circuits

Advancements in display technology have primarily focused on discovering new materials to develop thin-film transistors (TFTs) that complement mainstream technologies. The emerging 2D semiconductors are one of the most promising candidates due to their ultra-thin thickness, exceptional electrical qualities, and large-scale availability. However, these atomically thin materials are delicate and typically prepared through standard gate-first fabrication processes, necessitating their transfer onto specific substrates. In this study, a demonstration of an in situ gate-last process for 2D semiconductor-based TFTs technology is presented. This approach bypasses the yield-limiting transfer process, enabling large-scale display applications. The as-fabricated MoS2 TFTs retains their intrinsic properties with a current density reaching approximate to approximate to 10 mu A mu m(-1). Additionally, it is successfully showcased that the two transistor-one capacitor active-matrix display driving circuits with a high pixel yield. The patterned matrix exhibits no crosstalk and can be driven by either the pulse amplitude modulation or pulse width modulation scheme, offering flexible applications.