A V-Band Divide-by-Three Injection-Locked Frequency Divider in 28 nm CMOS

被引：10

作者：

Hsieh, Hsieh-Hung ^{[1
]}

Liu, Yi-Hsuan ^{[1
]}

Yeh, Tzu-Jin ^{[1
]}

Jou, Chewn-Pu ^{[1
]}

Hsueh, Fu-Lung ^{[1
]}

机构：

[1] TSMC, Mixed Signal RF Solut Div MRSD, Hsinchu, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 11期

关键词：

CMOS RF; differential direct injection; divide-by-three; injection-locked frequency divider (ILFD); 28 nm CMOS;

D O I：

10.1109/LMWC.2012.2225603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the 28 nm CMOS divide-by-three injection-locked frequency divider (ILFD) operating at the V band is presented for the first time. Based on a differential direct injection scheme, the proposed circuit can perform a division ratio of three while an enhanced locking range is achieved due to superior injection efficiency. From the measured results, the core circuit consumes a dc power of 8.8 mW from a 1 V supply voltage. At an incident power level of 0 dBm, the divider exhibits a locking range from 52.61 to 55.12 GHz. Within this frequency range, the output power and phase noise are kept around -5 dBm and -125 dBc/Hz at a 1 MHz offset, respectively.

引用

页码：592 / 594

页数：3