A V-Band Divide-by-Three Injection-Locked Frequency Divider in 28 nm CMOS

被引:9
|
作者
Hsieh, Hsieh-Hung [1 ]
Liu, Yi-Hsuan [1 ]
Yeh, Tzu-Jin [1 ]
Jou, Chewn-Pu [1 ]
Hsueh, Fu-Lung [1 ]
机构
[1] TSMC, Mixed Signal RF Solut Div MRSD, Hsinchu, Taiwan
关键词
CMOS RF; differential direct injection; divide-by-three; injection-locked frequency divider (ILFD); 28 nm CMOS;
D O I
10.1109/LMWC.2012.2225603
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, the 28 nm CMOS divide-by-three injection-locked frequency divider (ILFD) operating at the V band is presented for the first time. Based on a differential direct injection scheme, the proposed circuit can perform a division ratio of three while an enhanced locking range is achieved due to superior injection efficiency. From the measured results, the core circuit consumes a dc power of 8.8 mW from a 1 V supply voltage. At an incident power level of 0 dBm, the divider exhibits a locking range from 52.61 to 55.12 GHz. Within this frequency range, the output power and phase noise are kept around -5 dBm and -125 dBc/Hz at a 1 MHz offset, respectively.
引用
收藏
页码:592 / 594
页数:3
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