On the transient amorphous silicon structures during solid phase crystallization

被引：1

作者：

Law, F. ^{[1
,2
]}

Hidayat, H. ^{[1
,3
]}

Kumar, A. ^{[1
,3
]}

Widenborg, P. ^{[1
,3
]}

Luther, J. ^{[1
,2
]}

Hoex, B. ^{[1
]}

机构：

[1] Natl Univ Singapore, SERIS, Singapore 117574, Singapore

[2] Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, Singapore 117576, Singapore

[3] Natl Univ Singapore, Fac Engn, Dept Elect & Comp Engn, Singapore 117583, Singapore

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2013年 / 363卷

基金：

新加坡国家研究基金会;

关键词：

Amorphous silicon; Solid phase crystallization; Raman spectroscopy; In-situ X-ray diffraction; Fourier transform infrared spectroscopy; CHEMICAL-VAPOR-DEPOSITION; SI FILMS; HYDROGENATED MICROCRYSTALLINE; RECRYSTALLIZATION; TEMPERATURE; NUCLEATION; KINETICS; STRESS;

D O I：

10.1016/j.jnoncrysol.2012.12.034

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By analyzing the solid phase crystallization (SPC) of amorphous silicon (a-Si) with the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model, it was found that the crystallization kinetics was non-ideal, with indications of a non-constant nucleation rate. Detailed structural analysis of the a-Si material during SPC revealed an increasing bond angle distortion from the ideal crystalline silicon (c-Si) bond angle of 109.5 degrees. In addition, infrared measurements indicated a change in Si - Si bond polarizability, however its role in the SPC behavior is not clear. The increase in tensile stress, bond angle deviation and bond polarizability together with the increase in crystal fraction may suggest that these parameters could be correlated. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：172 / 177

页数：6

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