Silicon memristors go electric

被引:3
|
作者
Valov, Ilia [1 ]
机构
[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 7, Julich, Germany
关键词
D O I
10.1038/s41928-019-0209-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reliable memristive devices in which switching is based solely on electronic effects can be created from amorphous silicon by doping with oxygen and nitrogen. © 2019, Springer Nature Limited.
引用
收藏
页码:56 / 57
页数:2
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