Light-emitting polymer space-charge-limited transistor

被引：12
|
作者：
Chen, Chun-Yu [1 ]
Chao, Yu-Chiang [1 ]
Meng, Hsin-Fei [1 ]
Horng, Sheng-Fu [2 ]
机构：
[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期
关键词：
brightness; cathodes; light emitting diodes; organic semiconductors; space-charge limited devices; transistors;
D O I：
10.1063/1.3027057
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly(3-hexylthiophene). Yellow poly(para-phenylene vinylene) derivative is used as the yellow emitting material. As the cathode is fixed at -12 V and the grid base voltage varies from 0.9 to -0.9 V the light emission is turned on and off with on luminance up to 1208 cd/m(2). The current efficiency of the light-emitting transistor is 10 cd/A.
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页数：3
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