Imbedding germanium quantum dots in silica by a modified Stober method

被引：7
作者：
Rutledge, Hannah [1 ]
Oliva-Chatelain, Brittany L. [1 ]
Maguire-Boyle, Samuel J. [1 ]
Flood, Dennis L. [2 ]
Barron, Andrew R. [1 ,3 ,4 ]
机构：
[1] Rice Univ, Dept Chem, Houston, TX 77005 USA
[2] Natcore Technol Inc, Red Bank, NJ 07701 USA
[3] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA
[4] Swansea Univ, Coll Engn, Swansea SA2 8PP, W Glam, Wales
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 17卷
关键词：
Semiconductor; Quantum dot; Germanium; Silica; Stober; Coating; NANOSPHERES; EFFICIENCY; SPHERES; GROWTH; FILM;
D O I：
10.1016/j.mssp.2013.08.005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monodispersed silica nanoparticles 20 nm in diameter were synthesized with germanium quantum dots (QDs) as seeds using a modified Stober process. The resulting structures comprise of germanium QD core within a silica sphere (Ge@SiO2). Films of the Ge@SiO2 Stober particles result in an average QD...QD distance of 9.6 nm, which is less than the maximum distance required for good electron transfer (10 nm). Thus, this method represents an efficient alternative to the previously reported liquid phase deposition (LPD) of silica on Ge QDs where many silica particles contained more than one QD, resulting in a wide range of QD...QD distances. (C) 2013 Elsevier Ltd. All rights reserved.
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页码：7 / 12
页数：6
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