Nanostructure and photoluminescence property of Si/MgO and Si/ZnO co-sputtered films

被引：2
作者：
Koshizaki, N
Umehara, H
Sasaki, T
Pal, U
Oyama, T
机构：
[1] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan
[2] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
来源：
NANOSTRUCTURED MATERIALS | 1999年 / 12卷 / 5-8期
关键词：
D O I：
10.1016/S0965-9773(99)00281-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si/MgO and Si/ZnO films were deposited by placing Si plates on an MgO or ZnO target during sputter deposition. X-ray photoelectron spectroscopic (XPS) analysis revealed that the average Si valency was 3.1 for Si/MgO and 2.6 for Si/ZnO co-sputtered films when Si contents were 20%. Diffraction peaks of not Si-derived but less crystallized matrix were observed at low Si content ranges. Both films are seen to have structures with nanoparticle dispersion from TEM observation. The PL emission observed at 1.7 eV for Si/MgO and at 2.0 eV for Si/ZnO is deduced to arise from the electron-hole recombination mechanism in SiOx at the interface, which is similar to the Si/SiO2 co-sputtered film. (C) 1999 Acta Metallurgica Inc.
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页码：975 / 978
页数：4
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