Ge-content dependent efficiency of Si/SiGe heterojunction solar cell

被引：5
作者：
Das, Mukul K. [1 ]
Choudhary, Santosh K. [1 ]
机构：
[1] Indian Sch Mines, SAP Res Lab, Dept Elect Engn, Dhanbad 826004, Jharkhand, India
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 112卷 / 03期
关键词：
AUGER-RECOMBINATION;
D O I：
10.1007/s00339-013-7761-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Efficiency of n-Si1-x Ge (x) /p-Si heterojunction solar cell for different Ge-contents is studied in this paper by developing a numerical model for heterojunction solar cell. Carrier confinement at the heterointerface between Si and SiGe is considered in the present model. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x, and after a maximum value, it decreases.
引用
收藏
页码：543 / 548
页数：6
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