Poisson Ratio of Epitaxial Germanium Films Grown on Silicon

被引：16

作者：

Bharathan, Jayesh ^{[1
,2
]}

Narayan, Jagdish ^{[1
]}

Rozgonyi, George ^{[1
]}

Bulman, Gary E. ^{[2
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] RTI Int, Durham, NC 27709 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 01期

关键词：

Germanium film; Poisson ratio; x-ray diffraction; THERMAL-EXPANSION; THIN-FILMS; GE; SI; PHOTODETECTORS; SI(100);

D O I：

10.1007/s11664-012-2337-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. We have used residual thermal strain to measure the Poisson ratio of Ge films grown on Si aY001aY (c) substrates, using the sin(2) psi method and high-resolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared with the bulk value of 0.27. Our study indicates that use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film.

引用

页码：40 / 46

页数：7

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