The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures.

被引：0

作者：

Palmer, DJ ^{[1
]}

Smowton, PM ^{[1
]}

Blood, P ^{[1
]}

Yeh, JY ^{[1
]}

Mawst, LJ ^{[1
]}

Tansu, N ^{[1
]}

机构：

[1] Cardiff Univ, Dept Phys & Astron, Cardiff CF24 3YB, Wales

来源：

2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 | 2005年

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have measured gain and recombination in an InGaAs and an InGaAsN quantum well structure as a function of temperature. We find that the inclusion of nitrogen results in a reduction in the radiative efficiency. (c) 2004 Optical Society of America

引用

页码：101 / 103

页数：3

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