The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures.

被引：0
|
作者：
Palmer, DJ [1 ]
Smowton, PM [1 ]
Blood, P [1 ]
Yeh, JY [1 ]
Mawst, LJ [1 ]
Tansu, N [1 ]
机构：
[1] Cardiff Univ, Dept Phys & Astron, Cardiff CF24 3YB, Wales
来源：
2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 | 2005年
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D O I：
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中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have measured gain and recombination in an InGaAs and an InGaAsN quantum well structure as a function of temperature. We find that the inclusion of nitrogen results in a reduction in the radiative efficiency. (c) 2004 Optical Society of America
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页码：101 / 103
页数：3
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